Laser emission efficiency of semiconductor target of gas diode in the picosecond range

Laser emission efficiency of semiconductor target of gas diode in the picosecond range

Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 10 7 W/cm 2 at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pu...

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Veröffentlicht in:Bulletin of the Lebedev Physics Institute 2017, Vol.44 (1), p.13-16
Hauptverfasser: Nasibov, A. S., Berezhnoy, K. V., Bochkarev, M. B., Sadykova, A. G., Shunailov, S. A., Yalandin, M. I.
Format: Artikel
Sprache:eng
Schlagworte:
Lasers
Physics
Physics and Astronomy
Pulse shape
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Zusammenfassung:Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 10 7 W/cm 2 at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335617010043