A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum
The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-03, Vol.51 (3), p.370-373 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Ionychev, V. K. Shesterkina, A. A. |
| description | The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the
p
–
n
junction. Four deep levels are revealed and their parameters are determined. |
| doi_str_mv | 10.1134/S1063782617030083 |
| format | Article |
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p
–
n
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p
–
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junction. Four deep levels are revealed and their parameters are determined.</description><subject>Avalanches</subject><subject>Breakdown</subject><subject>Delay</subject><subject>Emission analysis</subject><subject>LEDs</subject><subject>Light emitting diodes</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Organic light emitting diodes</subject><subject>P-n junctions</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kctq7DAMhkNpodcH6M7QdVo5dhJ7OZTeoHAKbdfBseWMh8TJsT2Uvn09nbMolIMWEtL_SUIqiksK15QyfvNKoWGtqBraAgMQ7KA4oSChbHgrD3dxw8pd_bg4jXEDQKmo-UnhViSmrfkksyUGcSEafcIQifNkcjrMy6jipIheK-9x_M4_qBcyumGdSpxcSs4PxLjZYCQfLq3JEBD9rhSjmz2JC-oUttN5cWTVGPHinz8r3u_v3m4fy-c_D0-3q-dSs7rOLXvFTaWNEcbqRkluObXa9gxRctGDrZk0BrhSSkMvpcAeUEELvRBMoWJnxdW-7xLmv1uMqdvM2-DzyI4KAS2vueRZdb1XDWrEznk7p6B0NpMX17NH63J-xaWglWxplQG6B_JNYgxouyW4SYXPjkK3e0H36wWZqfZMzFo_YPixyn-hL0N0iis</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Ionychev, V. K.</creator><creator>Shesterkina, A. A.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170301</creationdate><title>A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum</title><author>Ionychev, V. K. ; Shesterkina, A. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-eba4d2cdd8dfc6a94f41fcfb3ee948b0f539dd04aaac0b998eb0ea070b883aea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Avalanches</topic><topic>Breakdown</topic><topic>Delay</topic><topic>Emission analysis</topic><topic>LEDs</topic><topic>Light emitting diodes</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Organic light emitting diodes</topic><topic>P-n junctions</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ionychev, V. K.</creatorcontrib><creatorcontrib>Shesterkina, A. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ionychev, V. K.</au><au>Shesterkina, A. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>51</volume><issue>3</issue><spage>370</spage><epage>373</epage><pages>370-373</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the
p
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| ispartof | Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.370-373 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Avalanches Breakdown Delay Emission analysis LEDs Light emitting diodes Magnetic Materials Magnetism Organic light emitting diodes P-n junctions Physics Physics and Astronomy Physics of Semiconductor Devices |
| title | A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum |
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