A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum

The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-03, Vol.51 (3), p.370-373
Hauptverfasser:	Ionychev, V. K., Shesterkina, A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanches Breakdown Delay Emission analysis LEDs Light emitting diodes Magnetic Materials Magnetism Organic light emitting diodes P-n junctions Physics Physics and Astronomy Physics of Semiconductor Devices
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Zusammenfassung:	The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the p – n junction. Four deep levels are revealed and their parameters are determined.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782617030083