The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon
The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irr...
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| Veröffentlicht in: | Technical physics letters 2017-02, Vol.43 (2), p.166-168 |
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| container_title | Technical physics letters |
| container_volume | 43 |
| creator | Bilenko, D. I. Galushka, V. V. Zharkova, E. A. Sidorov, V. I. Terin, D. V. Khasina, E. I. |
| description | The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/
p
-Si/Al structures. Long-term stable switched-state memory in the region of the
I–V
curve hysteresis is revealed. This effect is controlled by the irradiation dose. |
| doi_str_mv | 10.1134/S1063785017020031 |
| format | Article |
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p
-Si/Al structures. Long-term stable switched-state memory in the region of the
I–V
curve hysteresis is revealed. This effect is controlled by the irradiation dose.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785017020031</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum ; Classical and Continuum Physics ; Electrical properties ; Electrical resistivity ; Fermi level ; Food irradiation ; Gamma rays ; Irradiation ; Physics ; Physics and Astronomy ; Silicon</subject><ispartof>Technical physics letters, 2017-02, Vol.43 (2), p.166-168</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-fa9aace8e8876f1f1546bceab8884c1dd715979a375ecfbc25da5448079bb0813</citedby><cites>FETCH-LOGICAL-c316t-fa9aace8e8876f1f1546bceab8884c1dd715979a375ecfbc25da5448079bb0813</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785017020031$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785017020031$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Bilenko, D. I.</creatorcontrib><creatorcontrib>Galushka, V. V.</creatorcontrib><creatorcontrib>Zharkova, E. A.</creatorcontrib><creatorcontrib>Sidorov, V. I.</creatorcontrib><creatorcontrib>Terin, D. V.</creatorcontrib><creatorcontrib>Khasina, E. I.</creatorcontrib><title>The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/
p
-Si/Al structures. Long-term stable switched-state memory in the region of the
I–V
curve hysteresis is revealed. This effect is controlled by the irradiation dose.</description><subject>Aluminum</subject><subject>Classical and Continuum Physics</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Fermi level</subject><subject>Food irradiation</subject><subject>Gamma rays</subject><subject>Irradiation</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK7-AG8Bz9VM03z0KIu6woIH13NJ02Q3S9vUpIvsvzelHgQRBmaGed53hkHoFsg9AC0e3oFwKiQjIEhOCIUztABSkowzSs-nmtNsml-iqxgPhBCZs3KB6u3eYGOt0SP2Frf-Czc-mjg1O9V1CgfVODU63-MU40S3CQ5-2J-i06rFQ6pNGN0s6kz0gw_-GHF0rdO-v0YXVrXR3PzkJfp4ftqu1tnm7eV19bjJNAU-ZlaVSmkjjZSCW7DACl5ro2opZaGhaQSwUpSKCma0rXXOGsWKQhJR1jWRQJfobvZNB30eTRyrgz-GPq2sQCasKDjIRMFM6eBjDMZWQ3CdCqcKSDW9svrzyqTJZ01MbL8z4Zfzv6JvBrR2pA</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Bilenko, D. I.</creator><creator>Galushka, V. V.</creator><creator>Zharkova, E. A.</creator><creator>Sidorov, V. I.</creator><creator>Terin, D. V.</creator><creator>Khasina, E. I.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170201</creationdate><title>The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon</title><author>Bilenko, D. I. ; Galushka, V. V. ; Zharkova, E. A. ; Sidorov, V. I. ; Terin, D. V. ; Khasina, E. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-fa9aace8e8876f1f1546bceab8884c1dd715979a375ecfbc25da5448079bb0813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum</topic><topic>Classical and Continuum Physics</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Fermi level</topic><topic>Food irradiation</topic><topic>Gamma rays</topic><topic>Irradiation</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bilenko, D. I.</creatorcontrib><creatorcontrib>Galushka, V. V.</creatorcontrib><creatorcontrib>Zharkova, E. A.</creatorcontrib><creatorcontrib>Sidorov, V. I.</creatorcontrib><creatorcontrib>Terin, D. V.</creatorcontrib><creatorcontrib>Khasina, E. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bilenko, D. I.</au><au>Galushka, V. V.</au><au>Zharkova, E. A.</au><au>Sidorov, V. I.</au><au>Terin, D. V.</au><au>Khasina, E. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2017-02-01</date><risdate>2017</risdate><volume>43</volume><issue>2</issue><spage>166</spage><epage>168</epage><pages>166-168</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/
p
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I–V
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| ispartof | Technical physics letters, 2017-02, Vol.43 (2), p.166-168 |
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| subjects | Aluminum Classical and Continuum Physics Electrical properties Electrical resistivity Fermi level Food irradiation Gamma rays Irradiation Physics Physics and Astronomy Silicon |
| title | The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon |
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