The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon

The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon

The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irr...

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Veröffentlicht in:Technical physics letters 2017-02, Vol.43 (2), p.166-168
Hauptverfasser: Bilenko, D. I., Galushka, V. V., Zharkova, E. A., Sidorov, V. I., Terin, D. V., Khasina, E. I.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Classical and Continuum Physics
Electrical properties
Electrical resistivity
Fermi level
Food irradiation
Gamma rays
Irradiation
Physics
Physics and Astronomy
Silicon
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Zusammenfassung:The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/ p -Si/Al structures. Long-term stable switched-state memory in the region of the I–V curve hysteresis is revealed. This effect is controlled by the irradiation dose.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785017020031