Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology
The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-end is investigated in this paper. A new technique to facilitate the SET testing of the high frequency transceivers is proposed and demonstrated experimentally. The entire radar receiver front-end, including the...
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Veröffentlicht in: | IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.536-543 |
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creator | Zeinolabedinzadeh, Saeed Ulusoy, Ahmet C. Inanlou, Farzad Hanbin Ying Yunyi Gong Fleetwood, Zachary E. Roche, Nicolas J.-H Khachatrian, Ani McMorrow, Dale Buchner, Stephen P. Warner, Jeffrey H. Paki-Amouzou, Pauline Cressler, John D. |
description | The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-end is investigated in this paper. A new technique to facilitate the SET testing of the high frequency transceivers is proposed and demonstrated experimentally. The entire radar receiver front-end, including the high frequency signal sources and modulators, were designed and fully integrated in 90 nm 300 GHz SiGe process technology (Global Foundries SiGe 9HP). Two-photon absorption (TPA) laser pulses were utilized to induce transient currents in different devices in various circuit blocks. The study shows how short transient pulses from the high frequency tuned circuits are propagated throughout the receiver and are broadened while passing through low-pass filters present at supply nodes and the low-pass filter following the down-conversion mixer, thus affecting the digital data at the output of the receiver. The proposed methodology allows the study of the effect of SETs on the recovered digital data at the output of the high frequency receivers, thus allowing bit error rate calculations. Comprehensive device and circuit level simulations were also performed, and a close agreement between the measurement results and simulation data was demonstrated. To the authors' best knowledge, this is the first study of SET on full receiver at millimeter-wave (mmW) frequencies. |
doi_str_mv | 10.1109/TNS.2016.2638698 |
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A new technique to facilitate the SET testing of the high frequency transceivers is proposed and demonstrated experimentally. The entire radar receiver front-end, including the high frequency signal sources and modulators, were designed and fully integrated in 90 nm 300 GHz SiGe process technology (Global Foundries SiGe 9HP). Two-photon absorption (TPA) laser pulses were utilized to induce transient currents in different devices in various circuit blocks. The study shows how short transient pulses from the high frequency tuned circuits are propagated throughout the receiver and are broadened while passing through low-pass filters present at supply nodes and the low-pass filter following the down-conversion mixer, thus affecting the digital data at the output of the receiver. The proposed methodology allows the study of the effect of SETs on the recovered digital data at the output of the high frequency receivers, thus allowing bit error rate calculations. Comprehensive device and circuit level simulations were also performed, and a close agreement between the measurement results and simulation data was demonstrated. To the authors' best knowledge, this is the first study of SET on full receiver at millimeter-wave (mmW) frequencies.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2016.2638698</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; Cubesat ; extreme environments ; Filters ; Foundries ; Frequency modulation ; Integrated circuit modeling ; Millimeter waves ; millimeter-wave ; Nodes ; Radar ; radiometer ; receiver ; Receivers ; SiGe ; Silicon germanides ; Silicon germanium ; Simulation ; single-event transient ; space missions ; Technology ; Transient analysis ; two-photon absorption laser ; W-band</subject><ispartof>IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.536-543</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-f17c3c15dfec50f0eef837eaa1f1bcd062aeec35057c72cda3c54e672a796b6f3</citedby><cites>FETCH-LOGICAL-c291t-f17c3c15dfec50f0eef837eaa1f1bcd062aeec35057c72cda3c54e672a796b6f3</cites><orcidid>0000-0002-6857-9982 ; 0000-0002-2161-5640 ; 0000-0002-6520-0594 ; 0000-0002-6327-8953 ; 0000-0003-2548-0402</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7781599$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7781599$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zeinolabedinzadeh, Saeed</creatorcontrib><creatorcontrib>Ulusoy, Ahmet C.</creatorcontrib><creatorcontrib>Inanlou, Farzad</creatorcontrib><creatorcontrib>Hanbin Ying</creatorcontrib><creatorcontrib>Yunyi Gong</creatorcontrib><creatorcontrib>Fleetwood, Zachary E.</creatorcontrib><creatorcontrib>Roche, Nicolas J.-H</creatorcontrib><creatorcontrib>Khachatrian, Ani</creatorcontrib><creatorcontrib>McMorrow, Dale</creatorcontrib><creatorcontrib>Buchner, Stephen P.</creatorcontrib><creatorcontrib>Warner, Jeffrey H.</creatorcontrib><creatorcontrib>Paki-Amouzou, Pauline</creatorcontrib><creatorcontrib>Cressler, John D.</creatorcontrib><title>Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-end is investigated in this paper. A new technique to facilitate the SET testing of the high frequency transceivers is proposed and demonstrated experimentally. The entire radar receiver front-end, including the high frequency signal sources and modulators, were designed and fully integrated in 90 nm 300 GHz SiGe process technology (Global Foundries SiGe 9HP). Two-photon absorption (TPA) laser pulses were utilized to induce transient currents in different devices in various circuit blocks. The study shows how short transient pulses from the high frequency tuned circuits are propagated throughout the receiver and are broadened while passing through low-pass filters present at supply nodes and the low-pass filter following the down-conversion mixer, thus affecting the digital data at the output of the receiver. The proposed methodology allows the study of the effect of SETs on the recovered digital data at the output of the high frequency receivers, thus allowing bit error rate calculations. Comprehensive device and circuit level simulations were also performed, and a close agreement between the measurement results and simulation data was demonstrated. To the authors' best knowledge, this is the first study of SET on full receiver at millimeter-wave (mmW) frequencies.</description><subject>Circuits</subject><subject>Cubesat</subject><subject>extreme environments</subject><subject>Filters</subject><subject>Foundries</subject><subject>Frequency modulation</subject><subject>Integrated circuit modeling</subject><subject>Millimeter waves</subject><subject>millimeter-wave</subject><subject>Nodes</subject><subject>Radar</subject><subject>radiometer</subject><subject>receiver</subject><subject>Receivers</subject><subject>SiGe</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>Simulation</subject><subject>single-event transient</subject><subject>space missions</subject><subject>Technology</subject><subject>Transient analysis</subject><subject>two-photon absorption laser</subject><subject>W-band</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kNtLwzAUh4MoOKfvgi8BX-1M2uX2qNJdYCq4iY8lS09mRpvOtBvMv96MDZ8OB77vXH4I3VIyoJSox8XbfJASygcpzyRX8gz1KGMyoUzIc9QjhMpEDZW6RFdtu47tkBHWQ37u_KqCJN-B73BuLZiuxc5jjV9dVbkaOgjJl94B_gADbgcBj0LjuyT3JZ7WmwrqaEJ5cBTBvn7AGSF4PPnFczcGPHle4AWYb99UzWp_jS6srlq4OdU--hzli5dJMnsfT1-eZolJFe0SS4XJDGVlPIcRSwCszARoTS1dmpLwVAOYLH4gjEhNqTPDhsBFqoXiS26zPro_zt2E5mcLbVesm23wcWVBpWCckghGihwpE5q2DWCLTXC1DvuCkuKQahFTLQ6pFqdUo3J3VBwA_ONCSMqUyv4AKq9yLA</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Zeinolabedinzadeh, Saeed</creator><creator>Ulusoy, Ahmet C.</creator><creator>Inanlou, Farzad</creator><creator>Hanbin Ying</creator><creator>Yunyi Gong</creator><creator>Fleetwood, Zachary E.</creator><creator>Roche, Nicolas J.-H</creator><creator>Khachatrian, Ani</creator><creator>McMorrow, Dale</creator><creator>Buchner, Stephen P.</creator><creator>Warner, Jeffrey H.</creator><creator>Paki-Amouzou, Pauline</creator><creator>Cressler, John D.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Ulusoy, Ahmet C. ; Inanlou, Farzad ; Hanbin Ying ; Yunyi Gong ; Fleetwood, Zachary E. ; Roche, Nicolas J.-H ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Warner, Jeffrey H. ; Paki-Amouzou, Pauline ; Cressler, John D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-f17c3c15dfec50f0eef837eaa1f1bcd062aeec35057c72cda3c54e672a796b6f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Circuits</topic><topic>Cubesat</topic><topic>extreme environments</topic><topic>Filters</topic><topic>Foundries</topic><topic>Frequency modulation</topic><topic>Integrated circuit modeling</topic><topic>Millimeter waves</topic><topic>millimeter-wave</topic><topic>Nodes</topic><topic>Radar</topic><topic>radiometer</topic><topic>receiver</topic><topic>Receivers</topic><topic>SiGe</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>Simulation</topic><topic>single-event transient</topic><topic>space missions</topic><topic>Technology</topic><topic>Transient analysis</topic><topic>two-photon absorption laser</topic><topic>W-band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zeinolabedinzadeh, Saeed</creatorcontrib><creatorcontrib>Ulusoy, Ahmet C.</creatorcontrib><creatorcontrib>Inanlou, Farzad</creatorcontrib><creatorcontrib>Hanbin Ying</creatorcontrib><creatorcontrib>Yunyi Gong</creatorcontrib><creatorcontrib>Fleetwood, Zachary E.</creatorcontrib><creatorcontrib>Roche, Nicolas J.-H</creatorcontrib><creatorcontrib>Khachatrian, Ani</creatorcontrib><creatorcontrib>McMorrow, Dale</creatorcontrib><creatorcontrib>Buchner, Stephen P.</creatorcontrib><creatorcontrib>Warner, Jeffrey H.</creatorcontrib><creatorcontrib>Paki-Amouzou, Pauline</creatorcontrib><creatorcontrib>Cressler, John D.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zeinolabedinzadeh, Saeed</au><au>Ulusoy, Ahmet C.</au><au>Inanlou, Farzad</au><au>Hanbin Ying</au><au>Yunyi Gong</au><au>Fleetwood, Zachary E.</au><au>Roche, Nicolas J.-H</au><au>Khachatrian, Ani</au><au>McMorrow, Dale</au><au>Buchner, Stephen P.</au><au>Warner, Jeffrey H.</au><au>Paki-Amouzou, Pauline</au><au>Cressler, John D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2017-01</date><risdate>2017</risdate><volume>64</volume><issue>1</issue><spage>536</spage><epage>543</epage><pages>536-543</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-end is investigated in this paper. A new technique to facilitate the SET testing of the high frequency transceivers is proposed and demonstrated experimentally. The entire radar receiver front-end, including the high frequency signal sources and modulators, were designed and fully integrated in 90 nm 300 GHz SiGe process technology (Global Foundries SiGe 9HP). Two-photon absorption (TPA) laser pulses were utilized to induce transient currents in different devices in various circuit blocks. The study shows how short transient pulses from the high frequency tuned circuits are propagated throughout the receiver and are broadened while passing through low-pass filters present at supply nodes and the low-pass filter following the down-conversion mixer, thus affecting the digital data at the output of the receiver. The proposed methodology allows the study of the effect of SETs on the recovered digital data at the output of the high frequency receivers, thus allowing bit error rate calculations. Comprehensive device and circuit level simulations were also performed, and a close agreement between the measurement results and simulation data was demonstrated. To the authors' best knowledge, this is the first study of SET on full receiver at millimeter-wave (mmW) frequencies.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2016.2638698</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-6857-9982</orcidid><orcidid>https://orcid.org/0000-0002-2161-5640</orcidid><orcidid>https://orcid.org/0000-0002-6520-0594</orcidid><orcidid>https://orcid.org/0000-0002-6327-8953</orcidid><orcidid>https://orcid.org/0000-0003-2548-0402</orcidid></addata></record> |
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subjects | Circuits Cubesat extreme environments Filters Foundries Frequency modulation Integrated circuit modeling Millimeter waves millimeter-wave Nodes Radar radiometer receiver Receivers SiGe Silicon germanides Silicon germanium Simulation single-event transient space missions Technology Transient analysis two-photon absorption laser W-band |
title | Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology |
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