Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

This paper reports on the low-dose-rate radiation response of Al-HfO 2 /SiO 2 -Si MOS devices, where the gate dielectric was formed by atomic layer deposition with 4.7 nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radi...

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