A 5.6 ppm/°C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point
This paper describes an MOSFET-only voltage reference realized in 65-nm CMOS featuring a temperature coefficient (TC) of 5.6 ppm/°C from -40 °C to 125 °C, a power supply rejection ratio of 87 dB from dc up to 800 kHz (and 75 dB at 1 MHz), a minimum supply voltage of 0.8 V, and a power dissipation of...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2017-03, Vol.52 (3), p.623-633 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper describes an MOSFET-only voltage reference realized in 65-nm CMOS featuring a temperature coefficient (TC) of 5.6 ppm/°C from -40 °C to 125 °C, a power supply rejection ratio of 87 dB from dc up to 800 kHz (and 75 dB at 1 MHz), a minimum supply voltage of 0.8 V, and a power dissipation of 13 μW. These attributes are achieved by exploiting the zero-TC point of an MOSFET and combining it with a novel curvature-compensation technique, an active attenuator, and an impedance-adapting frequency compensation scheme. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2016.2627544 |