A 5.6 ppm/°C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point

This paper describes an MOSFET-only voltage reference realized in 65-nm CMOS featuring a temperature coefficient (TC) of 5.6 ppm/°C from -40 °C to 125 °C, a power supply rejection ratio of 87 dB from dc up to 800 kHz (and 75 dB at 1 MHz), a minimum supply voltage of 0.8 V, and a power dissipation of...

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Veröffentlicht in:IEEE journal of solid-state circuits 2017-03, Vol.52 (3), p.623-633
Hauptverfasser: Jize Jiang, Wei Shu, Chang, Joseph S.
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper describes an MOSFET-only voltage reference realized in 65-nm CMOS featuring a temperature coefficient (TC) of 5.6 ppm/°C from -40 °C to 125 °C, a power supply rejection ratio of 87 dB from dc up to 800 kHz (and 75 dB at 1 MHz), a minimum supply voltage of 0.8 V, and a power dissipation of 13 μW. These attributes are achieved by exploiting the zero-TC point of an MOSFET and combining it with a novel curvature-compensation technique, an active attenuator, and an impedance-adapting frequency compensation scheme.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2016.2627544