High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

Free-standing nonpolar GaN substrates provide an excellent platform for the fabrication of high-speed blue and green light-emitting diodes (LEDs), which are attractive for visible-light communication, plastic optical fiber communication, and short-range under water optical communication. Nonpolar LE...

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Veröffentlicht in:IEEE photonics technology letters 2017-02, Vol.29 (4), p.381-384
Hauptverfasser: Rashidi, Arman, Monavarian, Morteza, Aragon, Andrew, Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin, Mishkat-Ul-Masabih, Saadat, Feezell, Daniel
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Sprache:eng
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Zusammenfassung:Free-standing nonpolar GaN substrates provide an excellent platform for the fabrication of high-speed blue and green light-emitting diodes (LEDs), which are attractive for visible-light communication, plastic optical fiber communication, and short-range under water optical communication. Nonpolar LEDs on free-standing GaN exhibit a large electron-hole wave function overlap, low extended defect density, and favorable thermal properties. Here, we demonstrate high-speed nonpolar InGaN/GaN LEDs with a peak emission wavelength between 455 and 465 nm on free-standing nonpolar GaN substrates. A large frequency modulation bandwidth of 524 MHz is demonstrated at a current density of 10 kA/cm 2 .
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2017.2650681