Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range
In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are...
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Veröffentlicht in: | Bulletin of the Polish Academy of Sciences. Technical sciences 2015-09, Vol.63 (3), p.597-603 |
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Sprache: | eng |
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Zusammenfassung: | In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3
m the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5
m when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively. |
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ISSN: | 2300-1917 0239-7528 2300-1917 |
DOI: | 10.1515/bpasts-2015-0070 |