Semi-analytical Model of Charge Domain Propagation and Its Device Application

Semi-analytical Model of Charge Domain Propagation and Its Device Application

A semi-analytical theory is presented to describe the growth and propagation of generalized charge carrier instabilities in materials exhibiting negative differential drift velocity. This theory is applied to study the operation of a GaAs-based device, and its interaction with a resonant circuit. Re...

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Veröffentlicht in:IEEE transactions on electron devices 2017-02, Vol.64 (2), p.400-406
Hauptverfasser: Sculley, Jonathan P., Yoder, P. Douglas
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Doping
Electron mobility
Erbium
Gunn effect
Mathematical models
numerical simulation
Oscillators
Steady-state
transferred electron devices
traveling dipole domain
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Beschreibung
Zusammenfassung:A semi-analytical theory is presented to describe the growth and propagation of generalized charge carrier instabilities in materials exhibiting negative differential drift velocity. This theory is applied to study the operation of a GaAs-based device, and its interaction with a resonant circuit. Results indicate the significance of an unstable accumulation domain, and are compared with Monte Carlo simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2642996