Extraction of the Defect Distributions in DRAM Capacitor Using [Formula Omitted]-[Formula Omitted] and [Formula Omitted]-[Formula Omitted] Sensitivity Maps

Extraction of the Defect Distributions in DRAM Capacitor Using [Formula Omitted]-[Formula Omitted] and [Formula Omitted]-[Formula Omitted] Sensitivity Maps

We propose a novel spectroscopic technique that allows determining the defect density distributions within metal-electrode-sandwiched dielectric based on [Formula Omitted]-[Formula Omitted] and [Formula Omitted]-[Formula Omitted] characteristics. The technique relies on determining "sensitivity...

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Veröffentlicht in:IEEE electron device letters 2016-10, Vol.37 (10), p.1280
Hauptverfasser: Sereni, Gabriele, Larcher, Luca, Kaczer, Ben, Popovici, Mihaela Ioana
Format: Artikel
Sprache:eng
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Zusammenfassung:We propose a novel spectroscopic technique that allows determining the defect density distributions within metal-electrode-sandwiched dielectric based on [Formula Omitted]-[Formula Omitted] and [Formula Omitted]-[Formula Omitted] characteristics. The technique relies on determining "sensitivity regions" corresponding to the energy-spatial coordinates of defects affecting [Formula Omitted]-[Formula Omitted] and [Formula Omitted]-[Formula Omitted] curves. This technique is then demonstrated on RuO x /SrTiO x /RuO x metal-insulator-metal structures for DRAM capacitor applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2601012