3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10 -5 Ω · cm 2 ) ohmic contact formed by directly d...
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Veröffentlicht in: | IEEE electron device letters 2016-09, Vol.37 (9), p.1189-1192 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10 -5 Ω · cm 2 ) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm 2 /V · s) was achieved compared with the annealed devices. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2016.2593771 |