Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sha...

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Veröffentlicht in:IEEE sensors journal 2016-09, Vol.16 (18), p.6903-6907
Hauptverfasser: Jeong-Hoon Seol, Sang-Bum Kang, Chang-Ju Lee, Chul-Ho Won, Hongsik Park, Jung-Hee Lee, Sung-Ho Hahm
Format: Artikel
Sprache:eng
Schlagworte:
AlGaN/GaN
Aluminum gallium nitride
Electrodes
Graphene
MISIM
Radiation effects
Schottky electrode
Sensor phenomena and characterization
UV sensor
Wide band gap semiconductors
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Zusammenfassung:We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better UV-to-visible rejection ratio than that of a Ni-electrode UV sensor.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2016.2594185