A Radiation-Hardened Non-Redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process

We propose SLCCFF which is a radiation hardened non-redundant flip-flop for an SOI process. The SLCCFF has the stacked structure to prevent soft errors on SOI processes while maintaining smaller delay and power overhead than conventional stacked FFs. Energy delay product of SLCCFF is 86% of the stac...

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Veröffentlicht in:IEEE transactions on nuclear science 2016-08, Vol.63 (4), p.2080-2086
Hauptverfasser: Furuta, Jun, Yamaguchi, Junki, Kobayashi, Kazutoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:We propose SLCCFF which is a radiation hardened non-redundant flip-flop for an SOI process. The SLCCFF has the stacked structure to prevent soft errors on SOI processes while maintaining smaller delay and power overhead than conventional stacked FFs. Energy delay product of SLCCFF is 86% of the stacked FF. We fabricate test chip in a 65 nm thin BOX FDSOI process and measured soft error rates of SLCCFF, stacked FF and standard DFF by neutron irradiation and α particles. Experimental results show that the SLCCFF is about 27x stronger than the standard DFF at 0.4 V power supply in the SOTB process. It is about 1080x stronger compared with the standard DFF in the bulk process.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2543745