Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer

Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer

We report on the growth by molecular‐beam epitaxy of short‐period ZnSe/CdSe superlattices (SLs) on an In0.3Ga0.7As metamorphic buffer layer. Such SLs are considered as a promising material for a wide band‐gap photoactive p‐n junction in a hybrid monolithic Ge/InxGa1‐xAs/Iny(Al,Ga)1‐yAs/II‐VI solar c...

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Veröffentlicht in:PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 VOL 13 NO 7-9, 2016-07, Vol.13 (7-9), p.503-506
Hauptverfasser: Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Belyaev, K. G., Ivanov, S. V., Pozina, G., Toropov, A. A.
Format: Artikel
Sprache:eng
Schlagworte:
enlarged quantum well
metamorphic buffer layer
superlattice
vertical carrier transport
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Zusammenfassung:We report on the growth by molecular‐beam epitaxy of short‐period ZnSe/CdSe superlattices (SLs) on an In0.3Ga0.7As metamorphic buffer layer. Such SLs are considered as a promising material for a wide band‐gap photoactive p‐n junction in a hybrid monolithic Ge/InxGa1‐xAs/Iny(Al,Ga)1‐yAs/II‐VI solar cell. Lattice‐matching of the SLs to the In0.3Ga0.7As layer is confirmed by X‐ray diffractometry. Vertical transport of photoexcited carriers is investigated by means of both steady state and time‐resolved photoluminescence techniques in heterostructures containing the ZnSe/CdSe SL with an enlarged quantum well (EQW). Characteristic times of the carrier transport across the SL towards EQW are evaluated in the temperature range 120–300 K. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201510305