ChemInform Abstract: NaGe6As6: Insertion of Sodium into the Layered Semiconductor Germanium Arsenide GeAs
The new title compound is prepared by solid state reaction of stoichiometric amounts of Na, Ge, and As (Al2O3 crucible in evacuated silica tubes, 650 °C, 10 d).
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| Veröffentlicht in: | ChemInform 2016-07, Vol.47 (32), p.no-no |
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| container_issue | 32 |
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| container_title | ChemInform |
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| creator | Khatun, Mansura Mar, Arthur |
| description | The new title compound is prepared by solid state reaction of stoichiometric amounts of Na, Ge, and As (Al2O3 crucible in evacuated silica tubes, 650 °C, 10 d). |
| doi_str_mv | 10.1002/chin.201632017 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0931-7597 |
| ispartof | ChemInform, 2016-07, Vol.47 (32), p.no-no |
| issn | 0931-7597 1522-2667 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | arsenic, As electric properties, superconductors, semiconductors germanium, Ge sodium, Na structure (solids and liquids) |
| title | ChemInform Abstract: NaGe6As6: Insertion of Sodium into the Layered Semiconductor Germanium Arsenide GeAs |
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