ChemInform Abstract: NaGe6As6: Insertion of Sodium into the Layered Semiconductor Germanium Arsenide GeAs

ChemInform Abstract: NaGe6As6: Insertion of Sodium into the Layered Semiconductor Germanium Arsenide GeAs

The new title compound is prepared by solid state reaction of stoichiometric amounts of Na, Ge, and As (Al2O3 crucible in evacuated silica tubes, 650 °C, 10 d).

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Veröffentlicht in:ChemInform 2016-07, Vol.47 (32), p.no-no
Hauptverfasser: Khatun, Mansura, Mar, Arthur
Format: Artikel
Sprache:eng
Schlagworte:
arsenic, As
electric properties, superconductors, semiconductors
germanium, Ge
sodium, Na
structure (solids and liquids)
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Zusammenfassung:The new title compound is prepared by solid state reaction of stoichiometric amounts of Na, Ge, and As (Al2O3 crucible in evacuated silica tubes, 650 °C, 10 d).
ISSN:0931-7597
1522-2667
DOI:10.1002/chin.201632017