The Electrical Properties of Epitaxial Grown Sc-Doped (Na0.85K0.15)0.5Bi0.5TiO3 Thin Film Prepared by Sol-Gel Method

Sc-doped (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO3 [100] (Nb:STO) single crystal substrate via an aqueous sol–gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 μC/cm2 and typical butterfly shape displacement–voltage loop with effective piezoelectric coefficient d33* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.