1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the th...

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Veröffentlicht in:	Materials science forum 2016-05, Vol.858, p.523-526
Hauptverfasser:	Nipoti, Roberta, Grossner, Ulrike, Parisini, Antonella, Centurioni, Emanuele, Elmi, Ivan, Vantaggio, Salvatore, Alfieri, Giovanni, Carnera, Alberto
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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