1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2016-05, Vol.858, p.523-526
Hauptverfasser: Nipoti, Roberta, Grossner, Ulrike, Parisini, Antonella, Centurioni, Emanuele, Elmi, Ivan, Vantaggio, Salvatore, Alfieri, Giovanni, Carnera, Alberto
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.523