A Broadside-Coupled Meander-Line Resonator in 0.13-[Formula Omitted] SiGe Technology for Millimeter-Wave Application

An on-chip resonator is designed and fabricated using a standard 0.13-[Formula Omitted] SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent [Formula Om...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2016-03, Vol.37 (3), p.329
Hauptverfasser: Chakraborty, Sudipta, Yang, Yang, Zhu, Xi, Sevimli, Oya, Xue, Quan, Esselle, Karu, Heimlich, Michael
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An on-chip resonator is designed and fabricated using a standard 0.13-[Formula Omitted] SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent [Formula Omitted] circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm2 ([Formula Omitted] mm[Formula Omitted].
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2520960