A Broadside-Coupled Meander-Line Resonator in 0.13-[Formula Omitted] SiGe Technology for Millimeter-Wave Application
An on-chip resonator is designed and fabricated using a standard 0.13-[Formula Omitted] SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent [Formula Om...
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Veröffentlicht in: | IEEE electron device letters 2016-03, Vol.37 (3), p.329 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | An on-chip resonator is designed and fabricated using a standard 0.13-[Formula Omitted] SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent [Formula Omitted] circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm2 ([Formula Omitted] mm[Formula Omitted]. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2016.2520960 |