Dual-Color InGaN/GaN Pyramidal Micro Light-Emitting Diode Selectively Grown on SiO Masked Si Substrate

Dual-color InGaN/GaN pyramidal micro light-emitting diode ( μ-LED) was directly grown on SiO 2 masked Si substrate via selective area growth technology. An electrically driven dual-color μ-LED with typical rectifying behavior and a turn-on voltage of about 3 V was demonstrated. Two emission peaks locating at 440 and 490 nm were observed by micro-photoluminescence. Using catholuminescence measurement, it was found that the blue emission originated from the apex of micro pyramid top, and green emission was mainly from the lower part of side facets. By controlling the injection current, electroluminescence emission color of the μ-LED can be tuned continuously from green to blue range.