Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu^sub 2^Al^sub 10

We have studied the effect of 3p electron doping on the unusual antiferromagnetic (AFM) order in the Kondo semiconductor ... with TN = 27 K by measuring the magnetic susceptibility ..., specific heat C, and electrical resistivity ... for polycrystalline samples of ... The large decrease in the absol...

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Veröffentlicht in:Journal of the Physical Society of Japan 2016-03, Vol.85 (3), p.1
Hauptverfasser: Hayashi, Kyosuke, Muro, Yuji, Fukuhara, Tadashi, Kawabata, Jo, Kuwai, Tomohiko, Takabatake, Toshiro
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Sprache:eng
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Zusammenfassung:We have studied the effect of 3p electron doping on the unusual antiferromagnetic (AFM) order in the Kondo semiconductor ... with TN = 27 K by measuring the magnetic susceptibility ..., specific heat C, and electrical resistivity ... for polycrystalline samples of ... The large decrease in the absolute value of paramagnetic Curie temperature |...P| with increasing y indicates the suppression of c-f hybridization. The thermal activation behavior in ...(T) above TN disappears for y = 0.3 and TN decreases to 12 K for y = 0.38. These systematic changes in |...P|, ...(T), and TN coincide with those reported in the 4d-electron doped system Ce(Ru1-xRhx)2Al10 with respect to the number of doped electrons per formula unit. This coincidence indicates that the Al 3p- and Ru 4d-electrons in ... play the equivalent role in both the formation of hybridization gap and the unusual AFM ordering. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0031-9015
1347-4073