New pixel circuits for controlling threshold voltage by back-gate bias voltage using crystalline oxide semiconductor FETs

We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also m...

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Veröffentlicht in:Journal of the Society for Information Display 2016-01, Vol.24 (1), p.35-43
Hauptverfasser: Kaneyasu, Makoto, Toyotaka, Kouhei, Shishido, Hideaki, Isa, Toshiyuki, Eguchi, Shingo, Miyake, Hiroyuki, Hirakata, Yoshiharu, Yamazaki, Shunpei, Dobashi, Masayoshi, Fujiwara, Chieko
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Sprache:eng
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Zusammenfassung:We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit. We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.406