Band‐Gap Engineering: Band‐Gap Engineering at a Semiconductor–Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015)

Band‐Gap Engineering: Band‐Gap Engineering at a Semiconductor–Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015)

In article 1400497, J. H. Ngai and co‐workers demonstrate that the band offset between single crystalline SrZrxTi1−xO3 and Ge can be tuned through the Zr content, providing a pathway to control electrical coupling between multifunctional oxides and semiconductors.

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Veröffentlicht in:Advanced materials interfaces 2015-03, Vol.2 (4), p.n/a
Hauptverfasser: Jahangir‐Moghadam, Mohammadreza, Ahmadi‐Majlan, Kamyar, Shen, Xuan, Droubay, Timothy, Bowden, Mark, Chrysler, Matthew, Su, Dong, Chambers, Scott A., Ngai, Joseph H.
Format: Artikel
Sprache:eng
Schlagworte:
band‐gap engineering
heterojunction
molecular beam epitaxy
oxides
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Zusammenfassung:In article 1400497, J. H. Ngai and co‐workers demonstrate that the band offset between single crystalline SrZrxTi1−xO3 and Ge can be tuned through the Zr content, providing a pathway to control electrical coupling between multifunctional oxides and semiconductors.
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.201570020