A 220-GHz SIS Mixer Tightly Integrated With a Sub-Hundred-Microwatt SiGe IF Amplifier

Future kilopixel-scale heterodyne focal plane arrays based on superconductor-insulator-superconductor (SIS) mixers will require submilliwatt power consumption low-noise amplifiers (LNAs) which are tightly integrated with the mixers. In this paper, an LNA that is optimized for direct connection to a 220-GHz SIS mixer chip and requires less than 100 μW of dc power is reported. The amplifier design process is described, and measurement results are presented. It is shown that, when pumped at local oscillator frequencies between 214 and 226 GHz, the mixer/amplifier module achieves a double-sideband system noise temperature between 35 and 50 K over the 3.3-6 GHz IF frequency range while requiring just 90 μW of dc power. Moreover, the potential to further reduce the power consumption is explored and successful operation is demonstrated for LNA power consumption as low as 60 μW.