V-band 18.3 dB/1.6 dBm three-stage amplifier with inductive self-biasing in 130-nm CMOS

ABSTRACT The common source amplifier design with the inductive self‐biasing is presented. The proposed design can establish the biasing and the impedance matching with two transmission line elements. Both theoretical and experimental verifications confirm that the three‐stage prototype achieves a gain per stage of 6.1 dB, and the output P1dB of 1.6 dBm with 29 mW power consumption at 53 GHz based on the standard CMOS 130 nm 1P8M technology. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:409–413, 2016