Thermography and electroluminescence imaging of scribing failures in Cu(In,Ga)Se2 thin film solar modules

Intentionally implemented scribing failures in Cu(In,Ga)Se2 modules are studied using electroluminescence (EL) and dark lock‐in thermography (DLIT). While the EL images do not allow a non‐ambiguous defect distinction, the DLIT images reveal characteristic defect patterns for each defect type. In order to explain the DLIT defect appearance, we model and simulate the scribing defects in a network simulation model. The simulations yield characteristic current flow patterns for each scribing defect type and thus aid in the understanding and interpretation of the measurements.