Point defects and interference effects in electron emission of Si/SiO2:Li,Na,K structures

SiO2 films, grown on a Si substrate and implanted with Li, Na, and K ions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate i...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2015-12, Vol.212 (12), p.2672-2676
Hauptverfasser:	Buntov, Evgeny, Zatsepin, Anatoly, Slesarev, Anatoly, Mikhailovich, Anna, Mikhaylov, Alexey
Format:	Artikel
Sprache:	eng
Schlagworte:	electron emission ion implantation Point defects silica silicon
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	SiO2 films, grown on a Si substrate and implanted with Li, Na, and K ions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate interference fringes in the experimental results. Three categories of defect states were identified and studied: intrinsic luminescent, emission‐active silica defect centers, and implanted cation‐related localized states.
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.201532446