Low-thermal budget flash light annealing for Al2O3 surface passivation

This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD‐grown Al2O3 layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a more than 10 times higher density of interface tr...

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Veröffentlicht in:Physica status solidi. PSS-RRL. Rapid research letters 2015-11, Vol.9 (11), p.631-635
Hauptverfasser: Simon, Daniel K., Henke, Thomas, Jordan, Paul M., Fengler, Franz P. G., Mikolajick, Thomas, Bartha, Johann W., Dirnstorfer, Ingo
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Sprache:eng
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Zusammenfassung:This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD‐grown Al2O3 layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a more than 10 times higher density of interface traps, and thus, inferior chemical passivation. The strong influence of the deposition parameters is explained by the limitation of hydrogen transport in Al2O3 during low‐thermal budget annealing. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Al2O3 passivation layers for solar cell applications require thermal activation, which is typically realized by annealing at 400 °C. However, this temperature is not compatible with low‐temperature cell architectures. In this study, millisecond flash light annealing is applied in 200 °C/H2 ambient. This low‐thermal budget process reaches a level of passivation that is comparable to standard annealing.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201510306