High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces

High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces

A pentacene (C 22 H 14 )-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current-voltage (I-V) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-...

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Veröffentlicht in:IEEE transactions on electron devices 2015-12, Vol.62 (12), p.4213-4219
Hauptverfasser: Smith, Melissa A., Gowers, Robert P., Shih, Andy, Akinwande, Akintunde I.
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Charge injection
Devices
Electric potential
Flexible substrates
High K dielectric materials
high-voltage thin-film transistors (HVTFTs)
high-κ gate dielectrics
Insulators
Mathematical models
Micromechanical devices
Organic semiconductors
Organic thin film transistors
Pentacene
Semiconductor devices
Semiconductors
Solar energy
Thin film transistors
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Zusammenfassung:A pentacene (C 22 H 14 )-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current-voltage (I-V) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2487991