High performance single crystalline PbWO^sub 4^ nanorod field effect transistor

Issue Title: Special Issue: Electronic Materials for Harsh Environments The highly crystalline PbWO^sub 4^ nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO^sub 4^ nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 µm and width 20 µm. Thin film (~100 nm) was made up of PbWO^sub 4^ nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm^sup 2^ V^sup -1^ s^sup -1^ and I^sub ON/OFF^ ratio ~10^sup 3^ which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO^sub 4^ providing direct path for charges to transport towards channel.