Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOFETs

Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOFETs

In this letter, the effectiveness of surface potential fluctuation (σ s ), experimentally extracted from the conductance method, in representing the mobility limited by Coulomb scattering (μ coulomb ) due to MOS interface charges has been experimentally examined in Si MOSFETs. It is found that μ cou...

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Veröffentlicht in:IEEE electron device letters 2015-11, Vol.36 (11), p.1183-1185
Hauptverfasser: Weili Cai, Takenaka, Mitsuru, Takagi, Shinichi
Format: Artikel
Sprache:eng
Schlagworte:
Conductance
conductance method
Coulomb friction
Coulomb scattering
Devices
Fluctuation
Fluctuations
interface charges
Interface states
inversion layer mobility
Logic gates
Metal oxide semiconductors
MOSFETs
Scattering
Silicon
Stress
surface potential fluctuation
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Beschreibung
Zusammenfassung:In this letter, the effectiveness of surface potential fluctuation (σ s ), experimentally extracted from the conductance method, in representing the mobility limited by Coulomb scattering (μ coulomb ) due to MOS interface charges has been experimentally examined in Si MOSFETs. It is found that μ coulomb can be described as a universal line proportional to σ s -2 , irrespective of the conditions of MOS interface charges, even under the coexistence of positive and negative charges, where threshold voltage shift (ΔV th ) cannot represent μ coulomb . This result can be explained by considering that σ s 2 more directly corresponds to the total amount of Coulomb scattering centers.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2477360