ChemInform Abstract: Ta-Based Amorphous Metal Thin Films

Two new Ta‐based ternary metal thin films with approximate composition Ta2Ni2Si and Ta2Mo2Si are deposited by radiofrequency magnetron sputtering onto Si/SiO2 substrates.

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Veröffentlicht in:ChemInform 2015-11, Vol.46 (46), p.no-no
Hauptverfasser: McGlone, John M., Olsen, Kristopher R., Stickle, William F., Abbott, James E., Pugliese, Roberto A., Long, Greg S., Keszler, Douglas A., Wager, John F.
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container_end_page no
container_issue 46
container_start_page no
container_title ChemInform
container_volume 46
creator McGlone, John M.
Olsen, Kristopher R.
Stickle, William F.
Abbott, James E.
Pugliese, Roberto A.
Long, Greg S.
Keszler, Douglas A.
Wager, John F.
description Two new Ta‐based ternary metal thin films with approximate composition Ta2Ni2Si and Ta2Mo2Si are deposited by radiofrequency magnetron sputtering onto Si/SiO2 substrates.
doi_str_mv 10.1002/chin.201546219
format Article
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subjects lasers
molybdenum
molybdenum, Mo
nickel
nickel, Ni
semiconductors
silicon
silicon, Si
Solar energy
superconductors
tantalum
tantalum, Ta
technology of materials
technology of materials, lasers, semiconductors, superconductors
Thin films
title ChemInform Abstract: Ta-Based Amorphous Metal Thin Films
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