BN-Enabled Epitaxy of Pb1-xSnxSe Nanoplates on SiO2/Si for High-Performance Mid-Infrared Detection
By designing a few‐layer boron nitried (BN) buffer layer, topological crystalline insulator Pb1–xSnxSe nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si‐based integrated circuit technology. Back‐gated field‐effect transistors of Pb1–xSnxSe nanoplates exhibit a...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-10, Vol.11 (40), p.5388-5394 |
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| creator | Wang, Qisheng Wen, Yao Yao, Fengrui Huang, Yun Wang, Zhenxing Li, Molin Zhan, Xueying Xu, Kai Wang, Fengmei Wang, Feng Li, Jie Liu, Kaihui Jiang, Chao Liu, Fengqi He, Jun |
| description | By designing a few‐layer boron nitried (BN) buffer layer, topological crystalline insulator Pb1–xSnxSe nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si‐based integrated circuit technology. Back‐gated field‐effect transistors of Pb1–xSnxSe nanoplates exhibit a room‐temperature carrier mobility of 0.73–4.90 cm2 V−1 s−1, comparable to layered materials and molecular crystals, and high‐efficiency mid‐IR detection (1.9–2.0 μm). |
| doi_str_mv | 10.1002/smll.201502049 |
| format | Article |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | epitaxial growth few-layer BN functional substrates mid-infrared detection Nanotechnology Pb1-xSnxSe nanoplates |
| title | BN-Enabled Epitaxy of Pb1-xSnxSe Nanoplates on SiO2/Si for High-Performance Mid-Infrared Detection |
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