BN-Enabled Epitaxy of Pb1-xSnxSe Nanoplates on SiO2/Si for High-Performance Mid-Infrared Detection

By designing a few‐layer boron nitried (BN) buffer layer, topological crystalline insulator Pb1–xSnxSe nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si‐based integrated circuit technology. Back‐gated field‐effect transistors of Pb1–xSnxSe nanoplates exhibit a room‐temperature carrier mobility of 0.73–4.90 cm2 V−1 s−1, comparable to layered materials and molecular crystals, and high‐efficiency mid‐IR detection (1.9–2.0 μm).