Fabrication and small signal modeling of 0.5 µm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz

An InGaAs/InP three mesa double heterojunction bipolar transistor demonstrating ft/fmax of 350/532 GHz was fabricated on 3 inch wafer with a 0.5 µm emitter and a composite collector. Base resistance Rbb of around 19 [Omega] was achieved to sustain a relative high fmax in 0.5 µm linewidth device. Small signal equivalent circuit model was established, and good agreement between measured and simulated values was achieved. Effects of some key parameters were analyzed based on simulated small signal equivalent circuit model. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2774-2778, 2015