High-efficiency GaN class-F/class-F−1 power amplifiers with distributed L-shaped parasitic-compensation circuit

High-efficiency GaN class-F/class-F−1 power amplifiers with distributed L-shaped parasitic-compensation circuit

ABSTRACT This article presents a straightforward parasitic‐compensation design method for class‐F and class‐F−1 (inverse F) power amplifiers (PAs) based on a simple L‐shaped transmission‐line section. Design equations are presented and design procedures are elaborated. The fabricated PAs, operating...

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Veröffentlicht in:Microwave and optical technology letters 2015-10, Vol.57 (10), p.2441-2445
Hauptverfasser: Cheng, Qian-Fu, Fu, Hai-Peng, Zhu, Shou-Kui, Wu, Hai-Feng, Ma, Jian-Guo
Format: Artikel
Sprache:eng
Schlagworte:
class-F
high efficiency
inverse class-F
parasitic-compensation
power amplifier
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Zusammenfassung:ABSTRACT This article presents a straightforward parasitic‐compensation design method for class‐F and class‐F−1 (inverse F) power amplifiers (PAs) based on a simple L‐shaped transmission‐line section. Design equations are presented and design procedures are elaborated. The fabricated PAs, operating at 2.14 GHz, deliver maximum power‐added efficiency of 80.2% for the class‐F mode and 79.1% for the class‐F−1 mode, respectively. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2441–2445, 2015
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.29348