Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

The preparation of high‐quality molybdenum oxide (MoOx) is demonstrated by plasma‐enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO3, and free of other elements apart from hydrogen (&11 at%). The films have a high transparency in the visible region and their compatibility with a‐Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoOx in hole‐selective contacts for silicon heterojunction solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) High‐quality MoOx films have been prepared by atomic layer deposition using (NtBu)2(NMe2)2Mo and O2 plasma at temperatures between 50 °C and 200 °C. The films are amorphous, of high purity and slightly substoichiometric with respect to MoO3. It has been demonstrated that the films are of interest for selective hole contacts in silicon heterojunction solar cells.