MODELING AND IDENTIFICATION STUDY OF THE VARIATION OF DYNAMIC PRESSURE IN REACTIVE SPUTTERING PROCESS

Automatic control of reactive sputtering process involves controlling the state of the electrical discharge plasma and the definition of control variables. Obtaining a thin film with a determined constant structure and composition, involves maintaining in every part of the substrate and at all time of the deposition process a constant number of collisions, i.e. activated plasma density. This condition is greatly hampered by the dynamics of surface phenomena that occur at the sputtered target. .