Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates

High-quality nonpolar m -plane GaN-based light-emitting diode (LED) wafers on LiGaO 2 (100) substrates have been grown in this work by the combination of pulsed laser deposition and molecular beam epitaxy technologies. This work systemically studies the crystalline quality, surface morphology, as well as optoelectronic properties of as-grown nonpolar m -plane GaN-based LED wafers. The as-grown nonpolar m -plane GaN-based LED wafers on LiGaO 2 (100) substrates show good structural properties with estimated dislocation density ∼10 8 cm −2 and abrupt InGaN/GaN interfaces. A photoluminescence peak at approximately 446 nm with full-width at half-maximum (FWHM) of 21.2 nm is identified at room temperature. A strong electroluminescence (EL) peak observed at 446 nm with FWHM of 20.7 nm is obtained at an injection current of 20 mA. Furthermore, there is a slight blue shift in the EL emission wavelength with increase in the injection current, while the EL FWHM can be kept stable thanks to the absence of the quantum confined Stark effect. This study of high-quality nonpolar m -plane GaN-based LEDs is of paramount importance for future application of high-efficiency GaN-based devices.