Room temperature photo-induced, Eu^sup 3+^-doped IGZO transparent thin films fabricated using sol-gel method

Room temperature photo-induced, Eu^sup 3+^-doped IGZO transparent thin films fabricated using sol-gel method

Red-emitting Eu^sup 3+^-doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol-gel method under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h. Structure, morphology, composition, and optical properties o...

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Veröffentlicht in:Journal of nanostructure in chemistry 2013-06, Vol.3 (1), p.1
Hauptverfasser: Krishnan, Rajagopalan, Thirumalai, Jagannathan, Chandramohan, Rathinam
Format: Artikel
Sprache:eng
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Zusammenfassung:Red-emitting Eu^sup 3+^-doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol-gel method under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h. Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction analysis, scanning electron microscope, X-ray photoelectron spectroscopy, and photoluminescence, respectively.
ISSN:2008-9244
2193-8865
DOI:10.1186/2193-8865-3-42