Effect of TiOx/TiO2 layer thickness on the properties of the pulsed laser deposited memristive device

Memristive properties of the pulsed laser deposited Pt/TiOx/TiO2/Pt heterostructures with different layer thicknesses are studied. It was found that the memristor device provides nonmonotonic dependence of the ratio of its resistance in low and high conductive states Roff/Ron on layers thickness. The maximum value of the ratio Roff/Ron = 200 is obtained when the thickness of both TiOx and TiO2 layers is 30 nm. The dependence of the stoichiometry index of deposited layers from their thicknesses is studied by means of Auger spectroscopy measurements. The nonmonotonic behaviour of the ratio Roff/Ron on layer thickness is discussed in terms of wide stoichiometry distribution through the amorphous TiOx/TiO2 structure. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)