Auger intensity anomalies from the Si(001)2 × 1 surface excited by the wave field of RHEED

The Auger intensity of Si‐LVV from the Si(001)2 × 1 surface has been measured at room temperature while changing the glancing angle of the incident electron beam of reflection high‐energy electron diffraction (RHEED). Such a beam‐rocking Auger electron spectroscopy (BRAES) profile shows intensity anomalies under surface wave resonance conditions. The surface structure of Si(001)2 × 1 has been analyzed by rocking curves of diffraction spots within the 0th Laue zone. Since RHEED intensities limited to the 0th Laue zone can be determined by the projected potential of Si atomic rows along the incident azimuth, the phase of asymmetric dimers with flip‐flop motion can be neglected. According to the Si(001)2 × 1 surface structure model which was confirmed by the rocking curve analysis, it was found that the calculated wave‐field intensity profile for Si atoms reveals similar intensity anomalies to those of the experimental BRAES profile. The background profile is also discussed in terms of the beam irradiation area and its transmissivity. Copyright © 2014 John Wiley & Sons, Ltd.