Fabrication and characterisation of solar-blind Al^sub 0.6^Ga^sub 0.4^N MSM photodetectors

Fabrication and characterisation of solar-blind Al^sub 0.6^Ga^sub 0.4^N MSM photodetectors

Solar-blind metal-semiconductor-metal photodiodes, based on MOCVD-grown Al^sub 0.6^Ga^sub 0.4^N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and tempora...

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Veröffentlicht in:Electronics letters 2005-03, Vol.41 (5), p.1
Hauptverfasser: Biyikli, N, Kimukin, I, Tut, T, Aytur, O, Ozbay, E
Format: Artikel
Sprache:eng
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Zusammenfassung:Solar-blind metal-semiconductor-metal photodiodes, based on MOCVD-grown Al^sub 0.6^Ga^sub 0.4^N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.
ISSN:0013-5194
1350-911X