200 GHz CMOS amplifier working close to device f^sub T
A 200 GHz CMOS amplifier with a compact fully differential configuration is presented. Accurate device modelling and creative circuit design indicate the amplifier can support gain at frequencies close to device f^sub T^. Measurement results are reported and validate the design, by achieving 8.1 dB...
Gespeichert in:
| Veröffentlicht in: | Electronics letters 2011-05, Vol.47 (11), p.1 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A 200 GHz CMOS amplifier with a compact fully differential configuration is presented. Accurate device modelling and creative circuit design indicate the amplifier can support gain at frequencies close to device f^sub T^. Measurement results are reported and validate the design, by achieving 8.1 dB gain at 200 GHz and over 20 GHz positive gain bandwidth. |
|---|---|
| ISSN: | 0013-5194 1350-911X |