Improved Switching Voltage Variation of Cu Atom Switch for Nonvolatile Programmable Logic

Switching voltage variation of a Cu atom switch (AS) is improved to δ = 9.5 % by adjusting the buffer oxidation state and electrode surface roughness. The complementary AS (CAS) connects two Cu lines at each edge and is composed of a dual-layered electrolyte of oxidized Ti buffer metal/polymer solid...

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Veröffentlicht in:	IEEE transactions on electron devices 2014-11, Vol.61 (11), p.3827-3832
Hauptverfasser:	Banno, Naoki, Tada, Munehiro, Sakamoto, Toshitsugu, Okamoto, Koichiro, Miyamura, Makoto, Iguchi, Noriyuki, Hada, Hiromitsu
Format:	Artikel
Sprache:	eng
Schlagworte:	Atom switch (AS) Copper Electric potential Electrodes field-programmable gate array (FPGA) Metals nonvolatile memory Oxidation Plasmas polymer programmable logic device (PLD) reconfigurable logic solid electrolyte Surface roughness Surface treatment Switches Switching Titanium Voltage
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