Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate
Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO 2 /YSZ (YSZ: yttria-stabilized ZrO 2 ) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, micro...
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| Veröffentlicht in: | Journal of electronic materials 2014-11, Vol.43 (11), p.4289-4293 |
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| creator | Qian, Y. W. Deng, J. X. Zheng, H. Zheng, P. Zheng, L. Qin, H. B. |
| description | Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO
2
/YSZ (YSZ: yttria-stabilized ZrO
2
) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization (
M
s
) is higher than 230 emu/cm
3
with a coercivity (
H
c
) smaller than 30Oe, which is suitable to be used in high-frequency devices. |
| doi_str_mv | 10.1007/s11664-014-3364-2 |
| format | Article |
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2
/YSZ (YSZ: yttria-stabilized ZrO
2
) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization (
M
s
) is higher than 230 emu/cm
3
with a coercivity (
H
c
) smaller than 30Oe, which is suitable to be used in high-frequency devices.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-014-3364-2</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cross-disciplinary physics: materials science; rheology ; Electronics and Microelectronics ; Exact sciences and technology ; Instrumentation ; Laser deposition ; Materials Science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical and Electronic Materials ; Oxygen ; Physics ; Pressure ; Silicon ; Solid State Physics ; Substrates ; Thin films</subject><ispartof>Journal of electronic materials, 2014-11, Vol.43 (11), p.4289-4293</ispartof><rights>The Minerals, Metals & Materials Society 2014</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c486t-acb14945ae08de54543040a69d6f445d34d8c7d4e57016ff3fac9073666225543</citedby><cites>FETCH-LOGICAL-c486t-acb14945ae08de54543040a69d6f445d34d8c7d4e57016ff3fac9073666225543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-014-3364-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-014-3364-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28883145$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Qian, Y. W.</creatorcontrib><creatorcontrib>Deng, J. X.</creatorcontrib><creatorcontrib>Zheng, H.</creatorcontrib><creatorcontrib>Zheng, P.</creatorcontrib><creatorcontrib>Zheng, L.</creatorcontrib><creatorcontrib>Qin, H. B.</creatorcontrib><title>Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO
2
/YSZ (YSZ: yttria-stabilized ZrO
2
) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization (
M
s
) is higher than 230 emu/cm
3
with a coercivity (
H
c
) smaller than 30Oe, which is suitable to be used in high-frequency devices.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Instrumentation</subject><subject>Laser deposition</subject><subject>Materials Science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical and Electronic Materials</subject><subject>Oxygen</subject><subject>Physics</subject><subject>Pressure</subject><subject>Silicon</subject><subject>Solid State Physics</subject><subject>Substrates</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kNtKAzEQhoMoWKsP4N2CeBnNbA5NL0WsFuoBVBBBQsxOdMs2W5Nd0Lc3S0W88WpO3_wz_IQcAjsBxianCUApQRkIynlOyi0yAik4Ba2etsmIcQVUllzukr2UloyBBA0j8jIPvukxOCxaX9x-fr1hKO4iptTH3ApF9465btcYuxrTAN3U9DrQ51DMMMa6w2JWN6s0sPd1U7sh9q-pi7bDfbLjbZPw4CeOyePs4uH8ii5uL-fnZwvqhFYdte4VxFRIi0xXKEX-mwlm1bRSXghZcVFpN6kEygkD5T331k3ZhCulylJmekyONrrr2H70mDqzbPsY8kkDMkNCc60yBRvKxTaliN6sY72y8csAM4OLZuOiyS6awUVT5p3jH2WbnG18tMHV6Xex1FpzEDJz5YZLeRTeMP754F_xb7L-gFM</recordid><startdate>20141101</startdate><enddate>20141101</enddate><creator>Qian, Y. 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W. ; Deng, J. X. ; Zheng, H. ; Zheng, P. ; Zheng, L. ; Qin, H. 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W.</au><au>Deng, J. X.</au><au>Zheng, H.</au><au>Zheng, P.</au><au>Zheng, L.</au><au>Qin, H. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2014-11-01</date><risdate>2014</risdate><volume>43</volume><issue>11</issue><spage>4289</spage><epage>4293</epage><pages>4289-4293</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO
2
/YSZ (YSZ: yttria-stabilized ZrO
2
) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization (
M
s
) is higher than 230 emu/cm
3
with a coercivity (
H
c
) smaller than 30Oe, which is suitable to be used in high-frequency devices.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-014-3364-2</doi><tpages>5</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Electronics and Microelectronics Exact sciences and technology Instrumentation Laser deposition Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Oxygen Physics Pressure Silicon Solid State Physics Substrates Thin films |
| title | Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate |
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