Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate

Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO 2 /YSZ (YSZ: yttria-stabilized ZrO 2 ) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, micro...

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Veröffentlicht in:	Journal of electronic materials 2014-11, Vol.43 (11), p.4289-4293
Hauptverfasser:	Qian, Y. W., Deng, J. X., Zheng, H., Zheng, P., Zheng, L., Qin, H. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Electronics and Microelectronics Exact sciences and technology Instrumentation Laser deposition Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Oxygen Physics Pressure Silicon Solid State Physics Substrates Thin films
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Zusammenfassung:	Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO 2 /YSZ (YSZ: yttria-stabilized ZrO 2 ) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization ( M s ) is higher than 230 emu/cm 3 with a coercivity ( H c ) smaller than 30Oe, which is suitable to be used in high-frequency devices.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-014-3364-2